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 Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1023
DESCRIPTION DARLINGTON High DC current gain With TO-220 package
PINNING
PIN 1 2 3 Base
DESCRIPTION
Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol
ABSOLUTE MAXIMUM RATINGS (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 5 8 0.5 1 30 150 -55~150 ae ae UNIT V V V A A A A W
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=3A; IB=5mA RL=10| VBB2=4V CONDITIONS IC=3A; IB=5mA IC=3A ;IB=5mA VCE=200V; IB=0 VCB=200V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=3V IC=0.5A ; VCE=10V 1500 20 MIN TYP. SYMBOL VCEsat VBEsat ICEO ICBO IEBO hFE fT ton ts tf
2SD1023
MAX 1.5 2.0 0.1 0.1 5 30000
UNIT V V mA mA mA
MHz 2 8 5 |I |I |I s s s
THERMAL CHARACTERISTICS
SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 4.17 UNIT ae /W
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
2SD1023
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
JMnic


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